发明授权
- 专利标题： Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
- 专利标题（中）： 硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构
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申请号： US13349838申请日： 2012-01-13
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公开(公告)号： US08367031B1公开(公告)日： 2013-02-05
- 发明人: Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
- 申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
- 申请人地址： US CA San Jose
- 专利权人： Kovio, Inc.
- 当前专利权人： Kovio, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： The Law Offices of Andrew D. Fortney
- 代理商 Andrew D. Fortney
- 主分类号： C01B31/36
- IPC分类号： C01B31/36
摘要：
A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.