发明授权
- 专利标题： Method of forming an insulation film having low impurity concentrations
- 专利标题（中）： 形成杂质浓度低的绝缘膜的方法
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申请号： US12607223申请日： 2009-10-28
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公开(公告)号： US08367557B2公开(公告)日： 2013-02-05
- 发明人: Naonori Akae , Yoshiro Hirose , Yushin Takasawa , Yosuke Ota
- 申请人： Naonori Akae , Yoshiro Hirose , Yushin Takasawa , Yosuke Ota
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokosai Electric, Inc.
- 当前专利权人： Hitachi Kokosai Electric, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2008-278089 20081029; JP2009-178309 20090730
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/318
摘要：
A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).
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