公开(公告)号：US08202809B2

公开(公告)日：2012-06-19

申请号：US12950340

申请日：2010-11-19

申请人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

发明人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

摘要： A semiconductor device manufacturing method includes: forming a layer on a heated substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen to the heated substrate in the process vessel under a pressure lower than atmospheric pressure; and forming an oxide film on the heated substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel.

摘要翻译： 半导体器件制造方法包括：通过将源气体供应到处理容器中，在加热的衬底上形成层; 通过在低于大气压的压力下将含有氧气和氢气的气体提供给处理容器中的加热衬底，将层变成氧化物层; 以及通过交替重复所述层的形成和所述层的改变，同时在其之间吹扫所述处理容器的内部，在所述加热的基板上形成氧化膜。 在层的形成中，源气体通过衬底侧的喷嘴向基板供给，并且通过喷嘴将惰性或含氢气体与源气体一起供给基板，使得速度 平行于衬底流动的源气体的流量大于在处理容器清洗过程中平行于衬底流动的惰性气体的速度。

公开(公告)号：US09196473B2

公开(公告)日：2015-11-24

申请号：US13976673

申请日：2011-12-16

申请人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

发明人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： A method that includes: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

摘要翻译： 一种方法，其包括：在引起所述源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。

公开(公告)号：US08367557B2

公开(公告)日：2013-02-05

申请号：US12607223

申请日：2009-10-28

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内压低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含氧气体生成含氧的氧化物质，氧化物质氧化含元素层; 其中在步骤（a）中所述含氢气体与所述源气体一起供应到所述处理容器中。

公开(公告)号：US20110124204A1

公开(公告)日：2011-05-26

申请号：US12950340

申请日：2010-11-19

申请人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

发明人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

摘要： A semiconductor device manufacturing method includes: forming a layer on a substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen into the process vessel heated and kept lower than atmospheric pressure; and forming an oxide film on the substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel.

摘要翻译： 半导体器件制造方法包括：通过将源气体供应到处理容器中，在衬底上形成层; 通过向加热并保持低于大气压的处理容器中提供含有氧气和氢气的气体将层变成氧化物层; 以及通过交替重复所述层的形成和所述层的改变，同时清洗所述处理容器的内部，在所述基板上形成氧化膜。 在层的形成中，源气体通过衬底侧的喷嘴向基板供给，并且通过喷嘴将惰性或含氢气体与源气体一起供给基板，使得速度 平行于衬底流动的源气体的流量大于在处理容器清洗过程中平行于衬底流动的惰性气体的速度。

公开(公告)号：US20130337660A1

公开(公告)日：2013-12-19

申请号：US13976673

申请日：2011-12-16

申请人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

发明人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC分类号： H01L21/02

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

摘要翻译： 提供：在引起源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定的含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。

公开(公告)号：US08415258B2

公开(公告)日：2013-04-09

申请号：US13286314

申请日：2011-11-01

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  C23C16/32 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3185

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：将基底装载到处理容器中; 通过交替地重复以下步骤来执行在衬底上形成膜的工艺：（a）通过将至少两种类型的源气体供应到处理容器中，在衬底上形成含有元素的层，所述至少两种类型的源气体 （b）通过将反应气体供应到处理容器中来改变含有元素的层，所述反应气体与所述至少两种源气体不同; 并从处理容器卸载经处理的基材。

公开(公告)号：US20120045905A1

公开(公告)日：2012-02-23

申请号：US13286314

申请日：2011-11-01

申请人： Naonori AKAE ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

发明人： Naonori AKAE ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

IPC分类号： H01L21/314 ,  H01L21/318 ,  C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  H01L21/316 ,  C23C16/34

CPC分类号： H01L21/31608 ,  C23C16/32 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3185

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：将基底装载到处理容器中; 通过交替地重复以下步骤来执行在衬底上形成膜的工艺：（a）通过将至少两种类型的源气体供应到处理容器中，在衬底上形成含有元素的层，所述至少两种类型的源气体 （b）通过将反应气体供应到处理容器中来改变含有元素的层，所述反应气体与所述至少两种源气体不同; 并从处理容器卸载经处理的基材。

公开(公告)号：US08076251B2

公开(公告)日：2011-12-13

申请号：US12893311

申请日：2010-09-29

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  C23C16/32 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3185

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：将基底装载到处理容器中; 通过交替地重复以下步骤来执行在衬底上形成氧化物，氮化物或氧氮化物膜的工艺：（a）通过将含有元素的第一和第二源气体从处理容器中提取和排出而在衬底上形成含有元素的层 ; 和（b）通过将不同于所述第一和第二源气体的反应气体进入和排出所述处理容器而将含有所述元素的层改变为氧化物，氮化物或氧氮化物层; 并从处理容器卸载基材。 第一源气体比第二源气体更具反应性，并且供给到处理容器中的第一源气体的量被设定为小于供给到处理容器中的第二源气体的量。

公开(公告)号：US20100105192A1

公开(公告)日：2010-04-29

申请号：US12607223

申请日：2009-10-28

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/365 ,  H01L21/469 ,  H01L21/443

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device includes: forming an oxide film having a predetermined film thickness on a substrate by repeating a process of forming a predetermined element-containing layer on the substrate by supplying source gas containing a predetermined element into a process vessel accommodating the substrate, and a process of changing the predetermined element-containing layer to an oxide layer by supplying oxygen-containing gas and hydrogen-containing gas into the process vessel that is set below atmospheric pressure, wherein the oxygen-containing gas is oxygen gas or ozone gas, the hydrogen-containing gas is hydrogen gas or deuterium gas, and the temperature of the substrate is in a range from 400° C. or more to 700° C. or less in the process of forming the oxide film.

摘要翻译： 一种制造半导体器件的方法包括：通过重复在衬底上形成含有预定元素的层的工艺，在衬底上形成具有预定膜厚度的氧化物膜，该方法通过将包含预定元素的源气体供应到容纳 基板，以及通过将氧含有气体和含氢气体供给到设定在大气压以下的处理容器内而将规定的含有含有层的层变更为氧化物层的工序，其中，含氧气体为氧气或臭氧 气体，含氢气体是氢气或氘气，在形成氧化膜的过程中，基板的温度在400℃以上至700℃以下的范围内。

公开(公告)号：US09039838B2

公开(公告)日：2015-05-26

申请号：US13553968

申请日：2012-07-20

申请人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.

摘要翻译： 提供了一种基板处理装置。 该设备包括：处理容器，加热器，源气体供应系统，含氧气体供应系统，含氢气体供应系统，压力调节器和控制器。 所述控制器被配置为控制所述部件，以便执行以下操作：（a）通过交替地重复以下步骤：（a-1）通过将源气体供应到容纳所述基板的处理容器中而形成层，从而在基板上形成氧化膜; 和（a-2）通过向处理容器供给含氧气体和含氢气体将层改变为氧化物层，处理容器的内部处于低压的加热气氛下; 和（b）通过向处理容器供给含氧气体和含氢气体来改性在基板上形成的氧化膜，处理容器的内部处于低压的加热气氛下。