发明授权
- 专利标题： Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium
- 专利标题（中）： 半导体器件，半导体器件，半导体制造设备和存储介质的制造方法
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申请号： US12683073申请日： 2010-01-06
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公开(公告)号： US08378464B2公开(公告)日： 2013-02-19
- 发明人: Yoshihiro Kato , Yusaku Kashiwagi , Takashi Matsumoto
- 申请人： Yoshihiro Kato , Yusaku Kashiwagi , Takashi Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-178755 20070706
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L29/06
摘要：
A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.
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