发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US13075169申请日: 2011-03-29
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公开(公告)号: US08385124B2公开(公告)日: 2013-02-26
- 发明人: Tsuyoshi Arigane , Digh Hisamoto , Yasuhiro Shimamoto , Yutaka Okuyama
- 申请人: Tsuyoshi Arigane , Digh Hisamoto , Yasuhiro Shimamoto , Yutaka Okuyama
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles and Stockbridge P.C.
- 优先权: JP2010-077538 20100330
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
The semiconductor device includes the nonvolatile memory cell in the main surface of a semiconductor substrate. The nonvolatile memory cell has a first insulating film over the semiconductor substrate, a conductive film, a second insulating film, the charge storage film capable of storing therein charges, a third insulating film over the charge storage film, a first gate electrode, a fourth insulating film in contact with the set of stacked films from the first insulating film to the foregoing first gate electrode, a fifth insulating film juxtaposed with the first insulating film over the foregoing semiconductor substrate, a second gate electrode formed over the fifth insulating film to be adjacent to the foregoing first gate electrode over the side surface of the fourth insulating film, and source/drain regions with the first and second gate electrodes interposed therebetween. The conductive film and the charge storage film are formed to two-dimensionally overlap.
公开/授权文献
- US20110242888A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2011-10-06