发明授权
- 专利标题: Chemical mechanical polishing method
- 专利标题(中): 化学机械抛光方法
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申请号: US13087356申请日: 2011-04-14
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公开(公告)号: US08389410B2公开(公告)日: 2013-03-05
- 发明人: Kun-Lin Wu , Meng-Jin Tsai
- 申请人: Kun-Lin Wu , Meng-Jin Tsai
- 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权: TW87110514A 19980630
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A chemical-mechanical polishing process includes the steps of providing a semiconductor substrate having a first conductive line thereon, and then forming at least one dielectric layer over the substrate and the first conductive line. Next, a chemical-mechanical polishing method is used to polish the surface of the dielectric layer. Thereafter, a cap layer is formed over the polished dielectric layer. The method of forming the cap layer includes depositing silicon oxide using a chemical vapor deposition method with silicane (SiH4) or tetra-ethyl-ortho-silicate (TEOS) as the main reactive agent. Alternatively, the cap layer can be formed by depositing silicon nitride using a chemical vapor deposition method with silicane or silicon dichlorohydride (SiH2Cl2) as the main reactive agent. Finally, a via opening is formed through the dielectric layer and the cap layer, and a second conductive line that couples electrically with the first conductive line through the via opening.
公开/授权文献
- US20110189854A1 CHEMICAL MECHANICAL POLISHING METHOD 公开/授权日:2011-08-04