Invention Grant
- Patent Title: High-capacity low cost multi-state magnetic memory
- Patent Title (中): 大容量低成本多态磁存储器
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Application No.: US13235232Application Date: 2011-09-16
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Publication No.: US08391054B2Publication Date: 2013-03-05
- Inventor: Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- Applicant: Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
Public/Granted literature
- US20120003757A1 HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY Public/Granted day:2012-01-05
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