发明授权
- 专利标题： Three dimensional integration with through silicon vias having multiple diameters
- 专利标题（中）： 具有多个直径的通过硅通孔的三维集成
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申请号： US12687289申请日： 2010-01-14
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公开(公告)号： US08399180B2公开(公告)日： 2013-03-19
- 发明人: Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- 申请人： Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Katherine Brown
- 主分类号： G03F7/26
- IPC分类号： G03F7/26
摘要：
A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure.
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