发明授权
- 专利标题: Methods of forming a gate structure
- 专利标题(中): 形成栅极结构的方法
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申请号: US13053923申请日: 2011-03-22
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公开(公告)号: US08404576B2公开(公告)日: 2013-03-26
- 发明人: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- 申请人: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2008-0037556 20080423
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion reduction layer pattern on the metal ohmic layer pattern an amorphous layer pattern on the diffusion reduction layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.
公开/授权文献
- US20110171818A1 METHODS OF FORMING A GATE STRUCTURE 公开/授权日:2011-07-14
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