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US08404576B2 Methods of forming a gate structure 有权
形成栅极结构的方法

Methods of forming a gate structure
摘要:
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion reduction layer pattern on the metal ohmic layer pattern an amorphous layer pattern on the diffusion reduction layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.
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