发明授权
- 专利标题： Organic thin film transistor with a protective layer between source and drain electrodes and electronic device
- 专利标题（中）： 有机薄膜晶体管，在源极和漏极之间具有保护层和电子器件
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申请号： US13029383申请日： 2011-02-17
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公开(公告)号： US08405073B2公开(公告)日： 2013-03-26
- 发明人: Hideki Ono , Akihiro Nomoto , Iwao Yagi
- 申请人： Hideki Ono , Akihiro Nomoto , Iwao Yagi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SNR Denton US LLP
- 优先权： JP2010-050481 20100308
- 主分类号： H01L51/10
- IPC分类号： H01L51/10
摘要：
A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.
公开/授权文献
- US20110215406A1 THIN FILM TRANSISTOR AND ELECTRONIC DEVICE 公开/授权日：2011-09-08
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