公开(公告)号：US08405073B2

公开(公告)日：2013-03-26

申请号：US13029383

申请日：2011-02-17

申请人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

发明人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

IPC分类号： H01L51/10

CPC分类号： H01L51/10

摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

摘要翻译： 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏电极之间的区域中。

公开(公告)号：US20110215406A1

公开(公告)日：2011-09-08

申请号：US13029383

申请日：2011-02-17

申请人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

发明人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

IPC分类号： H01L51/10

CPC分类号： H01L51/10

摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

摘要翻译： 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏极之间的区域中。

公开(公告)号：US08445912B2

公开(公告)日：2013-05-21

申请号：US13028604

申请日：2011-02-16

申请人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

发明人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/7869

摘要： A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

摘要翻译： 提供了容易制造的高性能薄膜晶体管结构。 薄膜晶体管结构包括：第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一，第二和第三电极的第一，第二和第三布线; 主堆叠体，设置成与第一电极相对，在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体，在第一和第二布线重叠的位置和/或第二布线之间，在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层， 或者在第一和第三布线重叠的位置之间的第一和第三布线之间。

公开(公告)号：US08258514B2

公开(公告)日：2012-09-04

申请号：US12913912

申请日：2010-10-28

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L33/16

CPC分类号： H01L51/102 ,  H01L27/283 ,  H01L51/0023 ,  H01L51/0545

摘要： Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.

摘要翻译： 这里公开了采用薄膜晶体管的半导体器件。 此外，半导体器件具有栅电极，栅极绝缘膜，有机半导体层，结构，源电极，漏电极和电极材料层。

公开(公告)号：US20110081746A1

公开(公告)日：2011-04-07

申请号：US12888488

申请日：2010-09-23

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L51/40

CPC分类号： H01L51/0015 ,  H01L51/0011 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成有机半导体层; 在有机半导体层上形成保护图案; 并通过在有机溶剂中溶解或使用保护图案作为掩模使有机半导体层升华来图案化有机半导体层。

公开(公告)号：US20110101358A1

公开(公告)日：2011-05-05

申请号：US12913912

申请日：2010-10-28

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L33/16 ,  H01L27/12

CPC分类号： H01L51/102 ,  H01L27/283 ,  H01L51/0023 ,  H01L51/0545

摘要： Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.

摘要翻译： 这里公开了采用薄膜晶体管的半导体器件。 此外，半导体器件具有栅电极，栅极绝缘膜，有机半导体层，结构，源电极，漏电极和电极材料层。

公开(公告)号：US08623695B2

公开(公告)日：2014-01-07

申请号：US12888488

申请日：2010-09-23

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L51/40

CPC分类号： H01L51/0015 ,  H01L51/0011 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成有机半导体层; 在有机半导体层上形成保护图案; 并通过在有机溶剂中溶解或使用保护图案作为掩模使有机半导体层升华来图案化有机半导体层。

公开(公告)号：US09011084B2

公开(公告)日：2015-04-21

申请号：US13231860

申请日：2011-09-13

申请人： Hideki Ono ,  Kenichi Murata ,  Shigeki Senoo ,  Goingwon Lee

发明人： Hideki Ono ,  Kenichi Murata ,  Shigeki Senoo ,  Goingwon Lee

IPC分类号： F01D9/02 ,  F01D5/14

CPC分类号： F01D5/141 ,  F05D2220/31 ,  F05D2240/121 ,  F05D2240/122 ,  F05D2250/711 ,  F05D2250/713

摘要： Suppressing profile loss of a moving blade due to radial flow without an increase in the length of a shaft of a turbine is disclosed. The degree of reaction on an inner circumferential side is set to an appropriate degree, reducing profile loss due to supersonic inflow, and improving turbine efficiency. A steam turbine stator vane has a trailing edge with a curved line when the stator vane is viewed from a downstream side in the axial direction. The curved line has an inflection point located on an outer circumferential side with respect to the center of the stator vane in the height direction of the stator vane. An inner circumferential portion of the curved line is located on the inner circumferential side with respect to the inflection point. An outer circumferential portion of the curved line is located on the outer circumferential side with respect to the inflection point.

摘要翻译： 公开了由于径向流动而不增加涡轮轴的长度而增加动叶片的轮廓损失。 将内周侧的反应度设定在适当的程度，减少由于超音速流入造成的轮廓损失，提高涡轮效率。 当从轴向的下游侧观察定子叶片时，汽轮机定子叶片具有带有曲线的后缘。 曲线具有相对于定子叶片的中心在定子叶片的高度方向上的外周侧上的拐点。 曲线的内周部相对于拐点位于内周侧。 曲线的外周部相对于拐点位于外周侧。

公开(公告)号：US08829499B2

公开(公告)日：2014-09-09

申请号：US13465748

申请日：2012-05-07

申请人： Hideki Ono

发明人： Hideki Ono

IPC分类号： H01L29/417 ,  H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC分类号： H01L51/0545 ,  H01L51/0018 ,  H01L51/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer.

摘要翻译： 一种半导体元件，包括有机半导体层和设置在有机半导体层的上表面上的层，其中该层的轮廓在有机半导体层的轮廓内。

公开(公告)号：US08557879B2

公开(公告)日：2013-10-15

申请号：US13580239

申请日：2011-01-06

申请人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

发明人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

IPC分类号： C07C27/00 ,  B01J20/34

CPC分类号： B01J35/023 ,  B01J21/066 ,  B01J21/08 ,  B01J23/75 ,  B01J23/8913 ,  B01J35/1061 ,  B01J37/009 ,  B01J37/0207 ,  B01J37/088 ,  B01J37/14 ,  B01J37/18 ,  B01J37/343 ,  C10G2/33 ,  C10G2300/4006 ,  C10G2300/703

摘要： A method for producing an activated Fischer-Tropsch synthesis catalyst comprising a hydrogen reduction step of subjecting a catalyst comprising 3 parts by mass to 50 parts by mass, as a metal atom, of a cobalt compound and/or a ruthenium compound, based on 100 parts by mass of a carrier containing a porous inorganic oxide, supported on the carrier, to reduction in a gas containing molecular hydrogen at a temperature of 300° C. to 600° C.; and a CO reduction step of subjecting the catalyst to reduction in a gas containing carbon monoxide and containing no molecular hydrogen at a temperature of 200° C. to 400° C.

摘要翻译： 一种活性费 - 托合成催化剂的制造方法，其特征在于，具有氢还原工序，该催化剂以钴化合物和/或钌化合物为基准，含有3质量份〜50质量份作为金属原子的催化剂， 在载体上承载含有多孔无机氧化物的载体的质量份，以在300℃至600℃的温度下还原含有分子氢的气体。 以及在200℃至400℃的温度下使催化剂还原含有一氧化碳并且不含分子氢的CO的还原步骤。