- 专利标题: Semiconductor device, and manufacturing method thereof
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申请号: US12323724申请日: 2008-11-26
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公开(公告)号: US08421135B2公开(公告)日: 2013-04-16
- 发明人: Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
- 申请人: Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2000-376722 20001211; JP2000-389093 20001221; JP2000-400280 20001228
- 主分类号: H01L31/062
- IPC分类号: H01L31/062
摘要:
In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
公开/授权文献
- US20090146149A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF 公开/授权日:2009-06-11
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