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公开(公告)号：US08421135B2
公开(公告)日：2013-04-16
申请号：US12323724
申请日：2008-11-26
IPC分类号： H01L31/062
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
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公开(公告)号：US20050263771A1
公开(公告)日：2005-12-01
申请号：US11181923
申请日：2005-07-15
IPC分类号： G02F1/136 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L31/036
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
摘要翻译： 在诸如液晶显示装置的显示装置中，在低功耗下实现大尺寸显示屏。 在有源矩阵型液晶显示装置中采用的像素部分的源极布线的表面通过电镀处理操作进行处理，以降低该源极布线的电阻值。 像素部的源极配线与制造驱动电路部的源极配线的工序不同， 此外，通过电镀处理操作来处理端子部分的电极，以便降低其电阻值。
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公开(公告)号：US06953951B2
公开(公告)日：2005-10-11
申请号：US10011813
申请日：2001-12-11
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
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公开(公告)号：US20090146149A1
公开(公告)日：2009-06-11
申请号：US12323724
申请日：2008-11-26
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
摘要翻译： 在诸如液晶显示装置的显示装置中，在低功耗下实现大尺寸显示屏。 在有源矩阵型液晶显示装置中采用的像素部分的源极布线的表面通过电镀处理操作进行处理，以降低该源极布线的电阻值。 像素部的源极配线与制造驱动电路部的源极配线的工序不同， 此外，通过电镀处理操作来处理端子部分的电极，以便降低其电阻值。
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公开(公告)号：US07459352B2
公开(公告)日：2008-12-02
申请号：US11181923
申请日：2005-07-15
IPC分类号： H01L21/84
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
摘要翻译： 在诸如液晶显示装置的显示装置中，在低功耗下实现大尺寸显示屏。 在有源矩阵型液晶显示装置中采用的像素部分的源极布线的表面通过电镀处理操作进行处理，以降低该源极布线的电阻值。 像素部的源极配线与制造驱动电路部的源极配线的工序不同， 此外，通过电镀处理操作来处理端子部分的电极，以便降低其电阻值。
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公开(公告)号：US20100094555A1
公开(公告)日：2010-04-15
申请号：US12572368
申请日：2009-10-02
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译： 本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。 根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。 驱动支撑系统的发光装置可以显示显示器的远侧。 可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。
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公开(公告)号：US07598927B2
公开(公告)日：2009-10-06
申请号：US10918402
申请日：2004-08-16
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译： 本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。 根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。 驱动支撑系统的发光装置可以显示显示器的远侧。 可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。
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8.发明授权Semiconductor device having stick drivers and a method of manufacturing the same 有权具有棒驱动器的半导体器件及其制造方法公开(公告)号：US06709901B1
公开(公告)日：2004-03-23
申请号：US09566723
申请日：2000-05-09
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
IPC分类号： H01L2100
CPC分类号： H01L29/786 , G02F1/13452 , H01L27/1237 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675 , H01L29/78678 , H01L2029/7863
摘要： A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
摘要翻译： 形成在像素区域中的像素TFT通过沟道蚀刻型反交错型TFT形成在第一衬底上，并且源极区域和漏极区域的图案化，并且通过相同的光掩模进行像素电极的图案化。 通过使用具有晶体半导体层的TFT和依赖于驱动电路的输入输出端子形成的驱动电路被作为一个单元。 在第三基板上形成多个单元，之后将第三基板分割成单独的单元，并将所获得的棒驱动器安装在第一基板上。
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公开(公告)号：US20110101331A1
公开(公告)日：2011-05-05
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
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公开(公告)号：US20110089414A1
公开(公告)日：2011-04-21
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。
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