发明授权
- 专利标题: Nanocrystal doped matrixes
- 专利标题(中): 纳米晶体掺杂基质
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申请号: US12590619申请日: 2009-11-09
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公开(公告)号: US08425803B2公开(公告)日: 2013-04-23
- 发明人: J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
- 申请人: J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 主分类号: C30B23/00
- IPC分类号: C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
摘要:
Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.
公开/授权文献
- US20100140551A1 Nanocrystal doped matrixes 公开/授权日:2010-06-10