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公开(公告)号：US07645397B2
公开(公告)日：2010-01-12
申请号：US11492717
申请日：2006-07-24
申请人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
发明人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
IPC分类号： C09K11/02
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.
摘要翻译： 提供掺杂半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 还提供了用于生产包含半导体纳米晶体的基质的方法。 还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及生产具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。
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公开(公告)号：US08425803B2
公开(公告)日：2013-04-23
申请号：US12590619
申请日：2009-11-09
申请人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
发明人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.
摘要翻译： 提供掺杂半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 还提供了用于生产包含半导体纳米晶体的基质的方法。 还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及生产具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。
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公开(公告)号：US20120068118A1
公开(公告)日：2012-03-22
申请号：US13277361
申请日：2011-10-20
申请人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
发明人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.
摘要翻译： 提供掺杂半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 矩阵也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 该基质也可用作光学器件上的滤光片和抗反射涂层以及下变换层。 还提供了用于生产包含半导体纳米晶体的基质的方法。 还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及生产具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。
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公开(公告)号：US20100140551A1
公开(公告)日：2010-06-10
申请号：US12590619
申请日：2009-11-09
申请人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
发明人： J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P. Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A. Whiteford , Jonathan Ziebarth
IPC分类号： C09K11/02
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.
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5.发明授权Process for group 10 metal nanostructure synthesis and compositions made using same 有权第10组金属纳米结构合成方法和使用该组合物制备的组合物公开(公告)号：US08088483B1
公开(公告)日：2012-01-03
申请号：US11304498
申请日：2005-12-15
申请人： Jeffery A. Whiteford , Mihai A. Buretea , William P. Freeman , J. Wallace Parce , Baixin Qian , Erik C. Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , William P. Freeman , J. Wallace Parce , Baixin Qian , Erik C. Scher
IPC分类号： B32B5/66
CPC分类号： C07F5/025 , B82Y30/00 , B82Y40/00 , C07F15/0066 , Y10T428/2982 , Y10T428/2991 , Y10T428/2998
摘要： Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.
摘要翻译： 提供了生产第10族金属纳米结构的方法。 所述方法包括新型前体，新型表面活性剂或新型前体 - 表面活性剂组合。 还介绍了与方法相关的组合。
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6.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US08062967B1
公开(公告)日：2011-11-22
申请号：US12475772
申请日：2009-06-01
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L21/3205
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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7.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US07557028B1
公开(公告)日：2009-07-07
申请号：US11178257
申请日：2005-07-08
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L21/28
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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8.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US08884273B1
公开(公告)日：2014-11-11
申请号：US13268208
申请日：2011-10-07
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L51/00
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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公开(公告)号：US20080118755A1
公开(公告)日：2008-05-22
申请号：US11299299
申请日：2005-12-09
申请人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： B05D5/12 , C07F5/025 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).
摘要翻译： 提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。 还提供了用于纳米结构上沉积后壳形成，用于可逆修饰纳米结构和用于操纵纳米结构的电子性质的方法。 本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以改进纳米结构的量子限制和/或减少的串扰。 本发明的配体还可用于操纵纳米结构组合物的电子性质（例如，通过调节能级，产生内部偏置场，减少电荷转移或泄漏等）。
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10.发明授权Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same 有权纳米结构的沉积后包封：组合物，包含其的装置和系统公开(公告)号：US07267875B2
公开(公告)日：2007-09-11
申请号：US11147670
申请日：2005-06-07
申请人： Jeffery A. Whiteford , Mihai Buretea , William P. Freeman , Andreas Meisel , Kyu S. Min , J. Wallace Parce , Erik Scher
发明人： Jeffery A. Whiteford , Mihai Buretea , William P. Freeman , Andreas Meisel , Kyu S. Min , J. Wallace Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： C09C1/3081 , B82Y30/00 , C01P2004/16 , C01P2004/45 , C01P2004/54 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C01P2006/60 , C09C3/006 , C09C3/063 , C09C3/12 , H01G4/14 , Y10S977/773 , Y10T428/2982 , Y10T428/2989 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
摘要翻译： 提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。 还提供了在纳米结构上沉积后壳形成和用于可逆修饰纳米结构的方法。 本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以改进纳米结构的量子限制和/或减少的串扰。
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