发明授权
- 专利标题： Silicon nitride dry trim without top pulldown
- 专利标题（中）： 氮化硅干式装饰，无顶部下拉
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申请号： US13329035申请日： 2011-12-16
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公开(公告)号： US08431461B1公开(公告)日： 2013-04-30
- 发明人: Qinghua Zhong , Yoshie Kimura , Tae Won Kim , Qian Fu , Gladys Lo , Ganesh Upadhyaya , Yoko Yamaguchi
- 申请人： Qinghua Zhong , Yoshie Kimura , Tae Won Kim , Qian Fu , Gladys Lo , Ganesh Upadhyaya , Yoko Yamaguchi
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.
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