公开(公告)号：US08431461B1

公开(公告)日：2013-04-30

申请号：US13329035

申请日：2011-12-16

申请人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

发明人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

IPC分类号： H01L21/336

CPC分类号： H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/78

摘要： A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.

摘要翻译： 提供了一种用于在衬底上形成具有硅栅极的器件的方法。 氮化硅间隔物形成在硅栅极的侧面上。 使用氮化硅间隔物作为掩模提供离子注入以形成离子注入区域。 非限制性层被选择性地沉积在间隔物和浇口上，所述间隔物和浇口选择性地在栅极和间隔物的顶部和间隔物之间​​沉积较厚的层，而不是在氮化硅间隔物的侧壁上沉积。 在氮化硅间隔物的侧壁上蚀刻掉非共形层的侧壁。 修整氮化硅间隔物。