发明授权
- 专利标题： Lateral trench transistor, as well as a method for its production
- 专利标题（中）： 横向沟槽晶体管，以及其生产方法
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申请号： US11262483申请日： 2005-10-28
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公开(公告)号： US08431988B2公开(公告)日： 2013-04-30
- 发明人: Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
- 申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Maginot, Moore & Beck
- 优先权： DE102004052643 20041029
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
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