公开(公告)号：US08431988B2

公开(公告)日：2013-04-30

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

IPC分类号： H01L29/66

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

摘要翻译： 横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。 重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

公开(公告)号：US20060118862A1

公开(公告)日：2006-06-08

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

IPC分类号： H01L29/94

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

公开(公告)号：US08334564B2

公开(公告)日：2012-12-18

申请号：US12984253

申请日：2011-01-04

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US20070138544A1

公开(公告)日：2007-06-21

申请号：US11469011

申请日：2006-08-31

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/94

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body is disclosed. In one embodiment, the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 公开了一种具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US20110095362A1

公开(公告)日：2011-04-28

申请号：US12984253

申请日：2011-01-04

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US07893486B2

公开(公告)日：2011-02-22

申请号：US12349952

申请日：2009-01-07

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US20090114986A1

公开(公告)日：2009-05-07

申请号：US12349952

申请日：2009-01-07

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US20180095426A1

公开(公告)日：2018-04-05

申请号：US15282615

申请日：2016-09-30

申请人： Sven Albers ,  Klaus Reingruber ,  Andreas Wolter ,  Georg Seidemann ,  Christian Geissler ,  Thorsten Meyer ,  Gerald Ofner

发明人： Sven Albers ,  Klaus Reingruber ,  Andreas Wolter ,  Georg Seidemann ,  Christian Geissler ,  Thorsten Meyer ,  Gerald Ofner

IPC分类号： G04B37/14 ,  H04B1/3827 ,  A44C5/02 ,  A44C5/00 ,  A44C5/14

CPC分类号： G04B37/1486 ,  A44C5/0053 ,  A44C5/02 ,  A44C5/105 ,  A44C5/14 ,  G06F1/163 ,  H04B1/385 ,  H04B2001/3861 ,  H04W4/80

摘要： A flexible band wearable electronic device includes a plurality of rigid links. The flexible band wearable electronic device also includes a number of pivot joints coupling the plurality of rigid links together. The flexible band wearable electronic device further includes a first electronic device on a first of the plurality of rigid links, and a second electronic device on a second of the plurality of rigid links. The flexible band wearable electronic device still further includes an electrical communication pathway between first electronic device and the second electronic device and through at least a portion of one of the number of pivot joints.

公开(公告)号：US09819327B2

公开(公告)日：2017-11-14

申请号：US14398049

申请日：2013-06-26

申请人： Saravana Maruthamuthu ,  Thorsten Meyer ,  Pablo Herrero ,  Andreas Wolter ,  Georg Seidemann ,  Mikael Knudsen ,  Pauli Jaervinen

发明人： Saravana Maruthamuthu ,  Thorsten Meyer ,  Pablo Herrero ,  Andreas Wolter ,  Georg Seidemann ,  Mikael Knudsen ,  Pauli Jaervinen

IPC分类号： H03H7/40 ,  H03H9/00 ,  H04B1/04 ,  H01Q5/335

CPC分类号： H03H9/0014 ,  H01Q5/335 ,  H03H7/40 ,  H04B1/0458

摘要： Techniques and configurations are disclosed for bulk acoustic wave resonator (BAWR) tuner circuits and their use in integrated circuit (IC) packages and mobile communication devices for radio frequency (RF) communication. In some embodiments, a mobile communication device may include an antenna; a transmitter circuit having an output port, a tuner circuit having one or more BAWRs, an antenna port coupled to the antenna, a transmitter port coupled to the output port of the transmitter circuit, and a control port; and a control circuit, coupled to the control port, configured to adjust an impedance of the tuner circuit, via adjustment of a BAWR or another component of the tuner circuit, based at least in part on an impedance of the antenna. Other embodiments may be described and/or claimed.

公开(公告)号：US09219034B2

公开(公告)日：2015-12-22

申请号：US13448583

申请日：2012-04-17

申请人： Thorsten Meyer ,  Grit Sommer

发明人： Thorsten Meyer ,  Grit Sommer

IPC分类号： H01L21/4763 ,  H01L23/525 ,  H01L23/522 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/525 ,  H01L23/3114 ,  H01L23/522 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L24/12 ,  H01L24/24 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/12105 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/24011 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00

摘要： A module includes a semiconductor chip and a conductive layer arranged over the semiconductor chip. The module also includes a spacer structure arranged to deflect the conductive layer away from the semiconductor chip.

摘要翻译： 模块包括半导体芯片和布置在半导体芯片上的导电层。 该模块还包括间隔结构，其布置成使导电层偏离半导体芯片。