Invention Grant
- Patent Title: Magnetic stack structure and manufacturing method thereof
- Patent Title (中): 磁性堆叠结构及其制造方法
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Application No.: US12499802Application Date: 2009-07-09
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Publication No.: US08435652B2Publication Date: 2013-05-07
- Inventor: Te-Ho Wu , Lin-Hsiu Ye , Ching-Ming Lee
- Applicant: Te-Ho Wu , Lin-Hsiu Ye , Ching-Ming Lee
- Applicant Address: TW Yunlin County
- Assignee: National Yunlin University of Science and Technology
- Current Assignee: National Yunlin University of Science and Technology
- Current Assignee Address: TW Yunlin County
- Agency: CKC & Partners Co., Ltd.
- Priority: TW98112666A 20090416
- Main IPC: H01F10/08
- IPC: H01F10/08
Abstract:
A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.
Public/Granted literature
- US20100266873A1 MAGNETIC STACK STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-10-21
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