利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.02 秒)

    Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit
    2.
    发明授权
    Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit 失效
    测量磁存储单元磁滞曲线和各向异性能的方法

    公开(公告)号：US07403414B2

    公开(公告)日：2008-07-22

    申请号：US11529225

    申请日：2006-09-29

    申请人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee ,  Ming-Chi Weng

    发明人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee ,  Ming-Chi Weng

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.

    摘要翻译： 公开了一种用于测量磁存储器单元的磁滞曲线和各向异性能的方法。 它包括通过额外的普通霍尔效应逐渐将不同的磁场施加到单层或多层磁性结构（如MRAM存储单元），并记录霍尔电压的变化，以获得特定仪器的滞后曲线和各向异性能 ，并计算单层或多层磁性结构的磁性材料的各向异性能量值。

    Magnetic random access memory and method of reducing critical current of the same
    3.
    发明授权
    Magnetic random access memory and method of reducing critical current of the same 有权
    磁性随机存取存储器和降低临界电流的方法

    公开(公告)号：US07596017B2

    公开(公告)日：2009-09-29

    申请号：US11679827

    申请日：2007-02-27

    申请人： Te-Ho Wu ,  Alberto Canizo Cabrera ,  Lin-Hsiu Ye

    发明人： Te-Ho Wu ,  Alberto Canizo Cabrera ,  Lin-Hsiu Ye

    IPC分类号： G11C11/14

    CPC分类号： H01L43/10 ,  G11C11/16 ,  Y10S977/933 ,  Y10S977/935

    摘要： A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.

    摘要翻译： 磁性随机存取存储器包括衬底，自由层和间隔层。 衬底和自由层由垂直各向异性铁素体薄膜制成。 间隔层夹在基片和自由层之间，由绝缘层制成。 该方法使用修正的Landau-Lifshitz-Gilbert方程来获得临界电流值作为交换耦合常数的函数。 在应用的几个外部磁场下，临界电流值是可预测的。 当交换耦合常数成比例地变化时，在最佳状态下临界电流值减小到其初始值的三分之一。

    MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF REDUCING CRITICAL CURRENT OF THE SAME
    4.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF REDUCING CRITICAL CURRENT OF THE SAME 有权
    磁性随机存取存储器和减少其相关电流的方法

    公开(公告)号：US20080205123A1

    公开(公告)日：2008-08-28

    申请号：US11679827

    申请日：2007-02-27

    申请人： Te-Ho Wu ,  Alberto Canizo Cabrera ,  Lin-Hsiu Ye

    发明人： Te-Ho Wu ,  Alberto Canizo Cabrera ,  Lin-Hsiu Ye

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  G11C11/16 ,  Y10S977/933 ,  Y10S977/935

    摘要： A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.

    摘要翻译： 磁性随机存取存储器包括衬底，自由层和间隔层。 衬底和自由层由垂直各向异性铁素体薄膜制成。 间隔层夹在基片和自由层之间，由绝缘层制成。 该方法使用修正的Landau-Lifshitz-Gilbert方程来获得临界电流值作为交换耦合常数的函数。 在应用的几个外部磁场下，临界电流值是可预测的。 当交换耦合常数成比例地变化时，在最佳状态下临界电流值减小到其初始值的三分之一。

    Method of measuring dimensionless coupling constant of magnetic structure
    5.
    发明授权
    Method of measuring dimensionless coupling constant of magnetic structure 有权
    测量磁性结构的无量纲耦合常数的方法

    公开(公告)号：US08558540B2

    公开(公告)日：2013-10-15

    申请号：US13253986

    申请日：2011-10-06

    申请人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Ying-Chuen Luo

    发明人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Ying-Chuen Luo

    IPC分类号： G01N27/72 ,  G11C11/16 ,  G01R33/14

    CPC分类号： G01N27/72

    摘要： In A method for measuring a dimensionless coupling constant of a magnetic structure includes the following steps. A step of applying an external vertical magnetic field is performed for enabling magnetic moments of a RE-TM (Rare Earth-Transition metal) alloy magnetic layer of the magnetic structure to be vertical and saturated. A step of measuring a compensation temperature is performed when the sum of the magnetization of the RE-TM alloy magnetic layer is zero. A step of applying an external parallel magnetic field to the RE-TM alloy magnetic layer is performed. A step of adjusting the temperature of the magnetic structure to the compensation temperature and measuring a hysteresis loop of the magnetic structure under the external parallel magnetic field is performed, wherein the inverse of the slope of hysteresis loop is a dimensionless coupling constant.

    摘要翻译： 用于测量磁性结构的无量纲耦合常数的方法包括以下步骤。 执行施加外部垂直磁场的步骤，以使得磁性结构的RE-TM（稀土 - 过渡金属）合金磁性层的磁矩能够垂直和饱和。 当RE-TM合金磁性层的磁化之和为零时，进行测量补偿温度的步骤。 执行向RE-TM合金磁性层施加外部平行磁场的步骤。 执行将磁性结构的温度调整到补偿温度并在外部并联磁场下测量磁性结构的磁滞回线的步骤，其中磁滞回线的斜率的倒数是无量纲耦合常数。

    Magnetic tunneling junction structure for magnetic random access memory
    6.
    发明申请
    Magnetic tunneling junction structure for magnetic random access memory 审中-公开
    磁性随机存取存储器的磁隧道结结构

    公开(公告)号：US20070215955A1

    公开(公告)日：2007-09-20

    申请号：US11543039

    申请日：2006-10-05

    申请人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Che-Hao Chang ,  Tzu-Jung Chen

    发明人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Che-Hao Chang ,  Tzu-Jung Chen

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/11502

    摘要： A magnetic tunneling junction structure for magnetic random access memory is disclosed. A composite structure includes at least a pinning layer, a barrier layer, a ferromagnetic layer and a free layer, and the material of the pinning layer and the free layer are perpendicularly anisotropic ferrimagnetic. As the structures include of several barrier layers, free layers and ferrimagnetic layers, that lower coercivity and high squareness for the hysteresis curves can be obtained, and reduction of the coercivity of the free layer can be achieved.

    摘要翻译： 公开了一种磁性随机存取存储器的磁隧道结结构。 复合结构至少包括钉扎层，阻挡层，铁磁层和自由层，并且钉扎层和自由层的材料是垂直的各向异性亚铁磁性的。 由于结构包括几个阻挡层，自由层和亚铁磁性层，可以获得磁滞曲线的矫顽力和高矩形度，并且可以实现自由层的矫顽力的降低。

    Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit
    7.
    发明申请
    Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit 失效
    测量磁存储单元磁滞曲线和各向异性能的方法

    公开(公告)号：US20070217255A1

    公开(公告)日：2007-09-20

    申请号：US11529225

    申请日：2006-09-29

    申请人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee ,  Ming-Chi Weng

    发明人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee ,  Ming-Chi Weng

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.

    摘要翻译： 公开了一种用于测量磁存储器单元的磁滞曲线和各向异性能的方法。 它包括通过额外的普通霍尔效应逐渐将不同的磁场施加到单层或多层磁性结构（如MRAM存储单元），并记录霍尔电压的变化，以获得特定仪器的滞后曲线和各向异性能 ，并计算单层或多层磁性结构的磁性材料的各向异性能量值。

    Method of measuring sub-micrometer hysteresis loops of magnetic films
    8.
    发明申请
    Method of measuring sub-micrometer hysteresis loops of magnetic films 审中-公开
    测量磁性薄膜亚微米磁滞回线的方法

    公开(公告)号：US20060250129A1

    公开(公告)日：2006-11-09

    申请号：US11397608

    申请日：2006-04-05

    申请人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee

    发明人： Te-Ho Wu ,  Lin-Hsiu Ye ,  Jia-Mou Lee

    IPC分类号： G01R33/12 ,  G01N27/72

    CPC分类号： G01R33/14 ,  G01R33/1207

    摘要： A method of measuring sub-micrometer hysteresis loops of a magnetic film is provided. First, a magnetic field is applied to a sample of a magnetic film, and a polarization microscope is used to observe an analytical area of the sample. Next, the observed dynamic video is converted to many digital pictures stored in chronological order. Then, the grayscale values of each selected pixel are read and converted to the corresponding relative magnetic moments, and hysteresis loops of each selected pixel are drawn.

    摘要翻译： 提供了一种测量磁性薄膜的亚微米磁滞回线的方法。 首先，向磁性膜的样品施加磁场，使用偏光显微镜观察样品的分析面积。 接下来，观察到的动态视频被转换为以时间顺序存储的许多数字图像。 然后，读取每个所选像素的灰度值并将其转换为相应的相对磁矩，并绘制每个所选像素的磁滞回线。