发明授权
- 专利标题： Semiconductor devices with raised extensions
- 专利标题（中）： 具有凸起延伸的半导体器件
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申请号： US13251757申请日： 2011-10-03
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公开(公告)号： US08435846B2公开(公告)日： 2013-05-07
- 发明人: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- 申请人： Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/461 ; H01L29/76 ; H01L29/66
摘要：
Transistor devices and methods of their fabrication are disclosed. In one method, a dummy gate structure is formed on a substrate. Bottom portions of the dummy gate structure are undercut. In addition, stair-shaped, raised source and drain regions are formed on the substrate and within at least one undercut formed by the undercutting. The dummy gate structure is removed and a replacement gate is formed on the substrate.
公开/授权文献
- US20130082308A1 SEMICONDUCTOR DEVICES WITH RAISED EXTENSIONS 公开/授权日：2013-04-04
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