Method to alter silicide properties using GCIB treatment

Invention Grant

US08435890B2 Method to alter silicide properties using GCIB treatment 失效

Title translation: 使用GCIB处理改变硅化物性质的方法

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Patent Title: Method to alter silicide properties using GCIB treatment
Patent Title (中): 使用GCIB处理改变硅化物性质的方法
Application No.: US13482550

Application Date: 2012-05-29
Publication No.: US08435890B2

Publication Date: 2013-05-07
Inventor: Noel Russell , John J. Hautala , John Gumpher
Applicant: Noel Russell , John J. Hautala , John Gumpher
Applicant Address: US MA Billerica
Assignee: TEL Epion Inc.
Current Assignee: TEL Epion Inc.
Current Assignee Address: US MA Billerica
Agency: Wood, Herron & Evans, LLP
Main IPC: H01L21/20
IPC: H01L21/20

Method to alter silicide properties using GCIB treatment

Abstract:

A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract(Chinese):

对半导体装置的制造方法进行说明。该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

Public/Granted literature

US20120238092A1 METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT Public/Granted day:2012-09-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长