发明授权
- 专利标题: 3D two bit-per-cell NAND flash memory
- 专利标题(中): 3D双比特单元NAND闪存
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申请号: US12785291申请日: 2010-05-21
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公开(公告)号: US08437192B2公开(公告)日: 2013-05-07
- 发明人: Hsiang-Lan Lung , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Tien-Yen Wang
- 申请人: Hsiang-Lan Lung , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Tien-Yen Wang
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes Beffel & Wolfeld LLP
- 主分类号: G11C16/00
- IPC分类号: G11C16/00 ; G11C16/02 ; G11C16/04 ; G11C5/02 ; G11C5/06
摘要:
A 3D memory device includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string.
公开/授权文献
- US20110286283A1 3D TWO-BIT-PER-CELL NAND FLASH MEMORY 公开/授权日:2011-11-24