Invention Grant
US08440541B2 Methods for reducing the width of the unbonded region in SOI structures
有权
降低SOI结构中未结合区域宽度的方法
- Patent Title: Methods for reducing the width of the unbonded region in SOI structures
- Patent Title (中): 降低SOI结构中未结合区域宽度的方法
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Application No.: US13021467Application Date: 2011-02-04
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Publication No.: US08440541B2Publication Date: 2013-05-14
- Inventor: John A. Pitney , Ichiro Yoshimura , Lu Fei
- Applicant: John A. Pitney , Ichiro Yoshimura , Lu Fei
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78
Abstract:
The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.
Public/Granted literature
- US20110207246A1 METHODS FOR REDUCING THE WIDTH OF THE UNBONDED REGION IN SOI STRUCTURES Public/Granted day:2011-08-25
Information query
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