发明授权
US08440549B2 Compound semiconductor device including aln layer of controlled skewness
有权
复合半导体器件包括受控偏移的Aln层
- 专利标题： Compound semiconductor device including aln layer of controlled skewness
- 专利标题（中）： 复合半导体器件包括受控偏移的Aln层
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申请号： US13237084申请日： 2011-09-20
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公开(公告)号： US08440549B2公开(公告)日： 2013-05-14
- 发明人: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- 申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- 申请人地址： JP Kawasaki JP Tokyo
- 专利权人： Fujitsu Limited,Hitachi Cable Co., Ltd.
- 当前专利权人： Fujitsu Limited,Hitachi Cable Co., Ltd.
- 当前专利权人地址： JP Kawasaki JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-093574 20070330
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/32
摘要：
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
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