Invention Grant
- Patent Title: Oxide-nitride stack gate dielectric
- Patent Title (中): 氧化氮化物堆叠栅极电介质
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Application No.: US11961750Application Date: 2007-12-20
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Publication No.: US08445381B2Publication Date: 2013-05-21
- Inventor: Krishnaswamy Ramkumar , Sundar Narayanan
- Applicant: Krishnaswamy Ramkumar , Sundar Narayanan
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
Public/Granted literature
- US20080093680A1 OXIDE-NITRIDE STACK GATE DIELECTRIC Public/Granted day:2008-04-24
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