- 专利标题: Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof
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申请号: US13026403申请日: 2011-02-14
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公开(公告)号: US08450742B2公开(公告)日: 2013-05-28
- 发明人: Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
- 申请人: Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
- 申请人地址: KR
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2007-0133679 20071218
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.