- 专利标题: Semiconductor device
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申请号: US12978805申请日: 2010-12-27
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公开(公告)号: US08450783B2公开(公告)日: 2013-05-28
- 发明人: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
- 申请人: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2009-298891 20091228; JP2010-007519 20100115; JP2010-160946 20100715
- 主分类号: H01L27/085
- IPC分类号: H01L27/085
摘要:
The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
公开/授权文献
- US20110156028A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-06-30