发明授权
US08455291B2 Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
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使用固态成像装置制造固态成像装置,固态成像装置和照相机的方法
- 专利标题: Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
- 专利标题(中): 使用固态成像装置制造固态成像装置,固态成像装置和照相机的方法
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申请号: US13017876申请日: 2011-01-31
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公开(公告)号: US08455291B2公开(公告)日: 2013-06-04
- 发明人: Takeshi Takeda , Tadayuki Dofuku , Kenji Takeo
- 申请人: Takeshi Takeda , Tadayuki Dofuku , Kenji Takeo
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: The Chicago Technology Law Group, LLC
- 代理商 Robert J. Depke
- 优先权: JP2005-256694 20050905; JP2005-275823 20050922
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L27/148
摘要:
A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.
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