Invention Grant
US08455291B2 Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
失效
使用固态成像装置制造固态成像装置，固态成像装置和照相机的方法
- Patent Title: Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
- Patent Title (中): 使用固态成像装置制造固态成像装置，固态成像装置和照相机的方法
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Application No.: US13017876Application Date: 2011-01-31
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Publication No.: US08455291B2Publication Date: 2013-06-04
- Inventor: Takeshi Takeda , Tadayuki Dofuku , Kenji Takeo
- Applicant: Takeshi Takeda , Tadayuki Dofuku , Kenji Takeo
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: The Chicago Technology Law Group, LLC
- Agent Robert J. Depke
- Priority: JP2005-256694 20050905; JP2005-275823 20050922
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/148
Abstract:
A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.
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