发明授权
- 专利标题： NAND logic word line selection
- 专利标题（中）： NAND逻辑字线选择
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申请号： US12928949申请日： 2010-12-22
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公开(公告)号： US08456946B2公开(公告)日： 2013-06-04
- 发明人: Swaroop Ghosh , Dinesh Somasekhar , Balaji Srinivasan , Fatih Hamzaoglu
- 申请人： Swaroop Ghosh , Dinesh Somasekhar , Balaji Srinivasan , Fatih Hamzaoglu
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A NAND architecture for selecting a word line driver in a DRAM is disclosed. Separately decoded addresses in the low, mid and high ranges are used to select a final word line driver. The output of the word line driver is at a potential negative with respect to ground for a deselected word line and a positive potential more positive than the power supply potential for a selected word line.
公开/授权文献
- US20120163114A1 NAND logic word line selection 公开/授权日：2012-06-28
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