发明授权
US08461674B2 Thermal plate with planar thermal zones for semiconductor processing
有权
具有用于半导体加工的平面热区的热板
- 专利标题: Thermal plate with planar thermal zones for semiconductor processing
- 专利标题(中): 具有用于半导体加工的平面热区的热板
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申请号: US13238396申请日: 2011-09-21
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公开(公告)号: US08461674B2公开(公告)日: 2013-06-11
- 发明人: Keith William Gaff , Keith Comendant , Anthony Ricci
- 申请人: Keith William Gaff , Keith Comendant , Anthony Ricci
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Buchanan Ingersoll & Rooney PC
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52
摘要:
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
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