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1.发明授权公开(公告)号：US08624168B2
公开(公告)日：2014-01-07
申请号：US13237444
申请日：2011-09-20
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译： 一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。
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公开(公告)号：US20130340942A1
公开(公告)日：2013-12-26
申请号：US13528194
申请日：2012-06-20
CPC分类号： F16J15/021 , H01J37/32495 , H01J37/32532 , H01J37/3255 , H01J37/32568 , H01J37/32715 , H01J37/32724 , H01L21/6831 , H01L21/6833 , H01L21/6838 , H02N13/00 , Y10T29/49908
摘要： A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.
摘要翻译： 用于在等离子体处理室中支撑半导体衬底的下部电极组件包括温度控制的下部基板，上部板，围绕结合层的安装槽和边缘密封件，该边缘密封件包括具有未压缩的外凹面的弹性带 状态，安装在槽中的带，使得带的上端和下端被轴向压缩，并且带的最大向外膨胀不大于预定距离。
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公开(公告)号：US08461674B2
公开(公告)日：2013-06-11
申请号：US13238396
申请日：2011-09-21
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译： 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。
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公开(公告)号：US20100108261A1
公开(公告)日：2010-05-06
申请号：US12609377
申请日：2009-10-30
申请人： Jason Augustino , Quan Chau , Keith William Gaff , Hanh Tuong Ha , Brett C. Richardson , Harmeet Singh
发明人： Jason Augustino , Quan Chau , Keith William Gaff , Hanh Tuong Ha , Brett C. Richardson , Harmeet Singh
IPC分类号： C23F1/08 , H01L21/306
CPC分类号： H01J37/20 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32642 , H01J37/32715
摘要： A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.
摘要翻译： 用于等离子体处理室的下部电极组件包括金属基座和上部和下部边缘环。 金属基底包括钎焊在一起的金属板，在基座的下侧表面上形成钎焊线，从下侧表面向水平方向延伸的边缘环支撑表面和在边缘环支撑表面上方的上侧表面。 上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕基底的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环和外侧边缘环的相对表面之间具有间隙 基地周边。 间隙具有总间隙长度与平均间隙宽度的宽高比，足以阻止钎焊线位置处的电弧。
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公开(公告)号：US09859142B2
公开(公告)日：2018-01-02
申请号：US13277873
申请日：2011-10-20
申请人： David Schaefer , Ambarish Chhatre , Keith William Gaff , Sung Lee
发明人： David Schaefer , Ambarish Chhatre , Keith William Gaff , Sung Lee
IPC分类号： F16J15/02 , H01L21/683 , H01J37/32 , H01L21/687
CPC分类号： H01L21/6833 , H01J37/32513 , H01J37/32715 , H01J37/32724 , H01L21/68757 , Y10T29/49826
摘要： A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.
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公开(公告)号：US20110143462A1
公开(公告)日：2011-06-16
申请号：US12966506
申请日：2010-12-13
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译： 一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑组件。 等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。
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公开(公告)号：US07802917B2
公开(公告)日：2010-09-28
申请号：US11198489
申请日：2005-08-05
CPC分类号： H01L21/6833 , H01L21/67248
摘要： Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.
摘要翻译： 在去除晶片暴露的热源之后，测量晶片温度作为时间的函数。 在晶片温度测量期间，在晶片和支撑晶片的卡盘之间的界面处以基本恒定的压力供应气体。 根据测量的晶片温度作为时间的函数确定与所施加的气体压力相对应的卡盘热表征参数值。 对于多个施加的气体压力测量晶片温度，以产生作为气体压力的函数的一组卡盘热表征参数值。 卡盘的热校准曲线是从测量卡盘热特性参数值和相应气体压力的集合中产生的。 卡盘的热校准曲线可用于调节气体压力，以在制造过程中获得特定的晶片温度。
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公开(公告)号：US08449174B2
公开(公告)日：2013-05-28
申请号：US12858408
申请日：2010-08-17
CPC分类号： H01L21/6833 , H01L21/67248
摘要： Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.
摘要翻译： 在去除晶片暴露的热源之后，测量晶片温度作为时间的函数。 在晶片温度测量期间，在晶片和支撑晶片的卡盘之间的界面处以基本恒定的压力供应气体。 根据测量的晶片温度作为时间的函数确定与所施加的气体压力相对应的卡盘热表征参数值。 对于多个施加的气体压力测量晶片温度，以产生作为气体压力的函数的一组卡盘热表征参数值。 卡盘的热校准曲线是从测量卡盘热特性参数值和相应气体压力的集合中产生的。 卡盘的热校准曲线可用于调节气体压力，以在制造过程中获得特定的晶片温度。
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公开(公告)号：US09412555B2
公开(公告)日：2016-08-09
申请号：US12609377
申请日：2009-10-30
申请人： Jason Augustino , Quan Chau , Keith William Gaff , Hanh Tuong Ha , Brett C. Richardson , Harmeet Singh
发明人： Jason Augustino , Quan Chau , Keith William Gaff , Hanh Tuong Ha , Brett C. Richardson , Harmeet Singh
CPC分类号： H01J37/20 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32642 , H01J37/32715
摘要： A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.
摘要翻译： 用于等离子体处理室的下部电极组件包括金属基座和上部和下部边缘环。 金属基底包括钎焊在一起的金属板，在基座的下侧表面上形成钎焊线，从下侧表面向水平方向延伸的边缘环支撑表面和在边缘环支撑表面上方的上侧表面。 上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕基底的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环和外侧边缘环的相对表面之间具有间隙 基地周边。 间隙具有总间隙长度与平均间隙宽度的宽高比，足以阻止钎焊线位置处的电弧。
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公开(公告)号：US08642480B2
公开(公告)日：2014-02-04
申请号：US12966506
申请日：2010-12-13
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译： 一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑 等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。
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