Invention Grant
- Patent Title: Flash memory programming power reduction
- Patent Title (中): 闪存编程功耗降低
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Application No.: US13090981Application Date: 2011-04-20
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Publication No.: US08462564B1Publication Date: 2013-06-11
- Inventor: Yonggang Wu , Guowei Wang , Nian Yang , Sachit Chandra , Aaron Lee
- Applicant: Yonggang Wu , Guowei Wang , Nian Yang , Sachit Chandra , Aaron Lee
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C8/08 ; G11C8/12 ; G11C16/12

Abstract:
A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.
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