Invention Grant
US08462564B1 Flash memory programming power reduction 有权
闪存编程功耗降低

Flash memory programming power reduction
Abstract:
A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.
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