发明授权
- 专利标题: Memory write operation methods and circuits
- 专利标题(中): 存储器写操作方法和电路
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申请号: US12823642申请日: 2010-06-25
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公开(公告)号: US08467263B2公开(公告)日: 2013-06-18
- 发明人: Jaydeep P. Kulkarni , Muhammad M. Khellah , Bibiche M. Geuskens , Arijit Raychowdhury , Tanay Karnik , Vivek K. De
- 申请人: Jaydeep P. Kulkarni , Muhammad M. Khellah , Bibiche M. Geuskens , Arijit Raychowdhury , Tanay Karnik , Vivek K. De
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
In some embodiments, write wordline boost may be obtained from wordline driver boost and/or from bit line access transistor boost.
公开/授权文献
- US20110317508A1 MEMORY WRITE OPERATION METHODS AND CIRCUITS 公开/授权日:2011-12-29