发明授权
US08470516B2 Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles
失效
通过使用化学扩增的电子束光刻形成浮雕图案的方法和衍生制品
- 专利标题： Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles
- 专利标题（中）： 通过使用化学扩增的电子束光刻形成浮雕图案的方法和衍生制品
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申请号： US12542821申请日： 2009-08-18
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公开(公告)号： US08470516B2公开(公告)日： 2013-06-25
- 发明人: Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
- 申请人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/26
摘要：
A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.
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