Invention Grant
US08471308B2 Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same
有权
工艺变异容差串联NMOS和PMOS二极管，以及标准单元，标签和含有这些二极管的传感器
- Patent Title: Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same
- Patent Title (中): 工艺变异容差串联NMOS和PMOS二极管，以及标准单元，标签和含有这些二极管的传感器
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Application No.: US13047627Application Date: 2011-03-14
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Publication No.: US08471308B2Publication Date: 2013-06-25
- Inventor: Vivek Subramanian , Patrick Smith
- Applicant: Vivek Subramanian , Patrick Smith
- Applicant Address: US CA San Jose
- Assignee: Kovio, Inc.
- Current Assignee: Kovio, Inc.
- Current Assignee Address: US CA San Jose
- Agent Andrew D. Fortney
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
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