发明授权
- 专利标题： Poly-Si thin film transistor and method of manufacturing the same
- 专利标题（中）： 多晶硅薄膜晶体管及其制造方法
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申请号： US12314212申请日： 2008-12-05
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公开(公告)号： US08476636B2公开(公告)日： 2013-07-02
- 发明人: Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
- 申请人： Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0068664 20080715
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L31/036 ; H01L31/112 ; H01L27/01 ; H01L27/12
摘要：
Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.
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