Invention Grant
- Patent Title: Poly-Si thin film transistor and method of manufacturing the same
- Patent Title (中): 多晶硅薄膜晶体管及其制造方法
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Application No.: US12314212Application Date: 2008-12-05
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Publication No.: US08476636B2Publication Date: 2013-07-02
- Inventor: Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
- Applicant: Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0068664 20080715
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L31/036 ; H01L31/112 ; H01L27/01 ; H01L27/12
Abstract:
Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.
Public/Granted literature
- US20100012942A1 Poly-si thin film transistor and method of manufacturing the same Public/Granted day:2010-01-21
Information query
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