发明授权
US08476639B2 Group III nitride semiconductor and group III nitride semiconductor structure
有权
III族氮化物半导体和III族氮化物半导体结构
- 专利标题: Group III nitride semiconductor and group III nitride semiconductor structure
- 专利标题(中): III族氮化物半导体和III族氮化物半导体结构
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申请号: US13323365申请日: 2011-12-12
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公开(公告)号: US08476639B2公开(公告)日: 2013-07-02
- 发明人: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2008-0100773 20081014
- 主分类号: H01L29/15
- IPC分类号: H01L29/15
摘要:
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.