公开(公告)号：US08110424B2

公开(公告)日：2012-02-07

申请号：US12419590

申请日：2009-04-07

申请人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20120086016A1

公开(公告)日：2012-04-12

申请号：US13323365

申请日：2011-12-12

申请人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L29/20 ,  H01L33/02

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US08476639B2

公开(公告)日：2013-07-02

申请号：US13323365

申请日：2011-12-12

申请人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L29/15

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20100090247A1

公开(公告)日：2010-04-15

申请号：US12419590

申请日：2009-04-07

申请人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L33/00 ,  H01L21/268 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20090137075A1

公开(公告)日：2009-05-28

申请号：US12155277

申请日：2008-06-02

申请人： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

摘要翻译： 提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

公开(公告)号：US07838315B2

公开(公告)日：2010-11-23

申请号：US12155277

申请日：2008-06-02

申请人： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

摘要翻译： 提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

公开(公告)号：US09312249B2

公开(公告)日：2016-04-12

申请号：US14338225

申请日：2014-07-22

申请人： Pun Jae . Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae . Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/56 ,  H01L25/13 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H05B33/08 ,  H01L25/075 ,  H01L33/50

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

摘要翻译： 在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第二导电型电极包括导电孔和电连接部。 导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。 电连接部分从导电通孔延伸并暴露于发光结构的外部。 绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。 形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。 在从有源层发射的光的路径上形成不均匀结构。

公开(公告)号：US20120018764A1

公开(公告)日：2012-01-26

申请号：US13127847

申请日：2009-11-16

申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

公开(公告)号：US08809893B2

公开(公告)日：2014-08-19

申请号：US13127847

申请日：2009-11-16

申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

公开(公告)号：US07968893B2

公开(公告)日：2011-06-28

申请号：US12210472

申请日：2008-09-15

申请人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

发明人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

IPC分类号： H01L31/0256 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。