公开(公告)号：US08476639B2

公开(公告)日：2013-07-02

申请号：US13323365

申请日：2011-12-12

申请人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L29/15

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20100090247A1

公开(公告)日：2010-04-15

申请号：US12419590

申请日：2009-04-07

申请人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L33/00 ,  H01L21/268 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20120086016A1

公开(公告)日：2012-04-12

申请号：US13323365

申请日：2011-12-12

申请人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L29/20 ,  H01L33/02

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US08110424B2

公开(公告)日：2012-02-07

申请号：US12419590

申请日：2009-04-07

申请人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US08110417B2

公开(公告)日：2012-02-07

申请号：US12885882

申请日：2010-09-20

申请人： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US07816284B2

公开(公告)日：2010-10-19

申请号：US12429458

申请日：2009-04-24

申请人： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20130020554A1

公开(公告)日：2013-01-24

申请号：US13553998

申请日：2012-07-20

申请人： Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

发明人： Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L33/382 ,  H01L2224/16245

摘要： There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件和发光设备。 半导体发光器件包括：发光二极管（LED）部，其设置在透光基板的一个区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及齐纳二极管部，其设置在所述透光性基板的另一区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层。

公开(公告)号：US07795054B2

公开(公告)日：2010-09-14

申请号：US11987712

申请日：2007-12-04

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

公开(公告)号：US08309970B2

公开(公告)日：2012-11-13

申请号：US12767324

申请日：2010-04-26

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

公开(公告)号：US20080135859A1

公开(公告)日：2008-06-12

申请号：US11987712

申请日：2007-12-04

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。