发明授权
- 专利标题： Manufacturing method of silicon spin transport device and silicon spin transport device
- 专利标题（中）： 硅自旋输送装置和硅自旋输送装置的制造方法
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申请号： US12690566申请日： 2010-01-20
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公开(公告)号： US08481337B2公开(公告)日： 2013-07-09
- 发明人: Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
- 申请人： Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2009-042906 20090225
- 主分类号： H01L43/00
- IPC分类号： H01L43/00
摘要：
An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer.