公开(公告)号：US20100314702A1

公开(公告)日：2010-12-16

申请号：US12796034

申请日：2010-06-08

申请人： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

发明人： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.

摘要翻译： 提供自旋传输装置，其包括由半导体材料构成的通道，经由第一绝缘层布置在通道上的磁化固定层，经由第二绝缘层布置在通道上的无磁化层，以及第一和第二电极 布置在通道上，其中通道的第一区域的载流子密度包括与第一绝缘层的接触表面，通道的第二区域包括与第二绝缘层的接触表面，通道的第三区域包括相对的 并且包括与第二电极相反的表面的沟道的第四区域高于整个通道的平均载流子密度。 因此，可以提供能够在抑制旋转散射的同时实现良好的自旋运输和电阻特性的自旋输送装置。

公开(公告)号：US08324672B2

公开(公告)日：2012-12-04

申请号：US12821466

申请日：2010-06-23

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254

摘要： A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer.

摘要翻译： 一种自旋传输装置，包括通道，第一和第二绝缘层，磁化固定层，磁化自由层，第一和第二布线，并且满足以下条件A和B中的至少一个条件A：第一布线包括 在磁化固定层的磁化固定层的厚度方向上延伸的垂直部分和从与磁化固定层侧分离的垂直部分在与磁化固定层的厚度方向交叉的方向上延伸的水平部分 和条件B：第二布线包括在磁化自由层上的磁化自由层的厚度方向上延伸的垂直部分和从远离磁化自由层侧的垂直部分延伸的水平部分 方向与磁化自由层的厚度方向交叉。

公开(公告)号：US08269294B2

公开(公告)日：2012-09-18

申请号：US12796034

申请日：2010-06-08

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.

摘要翻译： 提供自旋传输装置，其包括由半导体材料构成的通道，经由第一绝缘层布置在通道上的磁化固定层，经由第二绝缘层布置在通道上的无磁化层，以及第一和第二电极 布置在通道上，其中通道的第一区域的载流子密度包括与第一绝缘层的接触表面，通道的第二区域包括与第二绝缘层的接触表面，通道的第三区域包括相对的 并且包括与第二电极相反的表面的沟道的第四区域高于整个通道的平均载流子密度。 因此，可以提供能够在抑制旋转散射的同时实现良好的自旋运输和电阻特性的自旋输送装置。

公开(公告)号：US20100327333A1

公开(公告)日：2010-12-30

申请号：US12821466

申请日：2010-06-23

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

IPC分类号： H01L29/82

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254

摘要： A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer.

摘要翻译： 一种自旋传输装置，包括通道，第一和第二绝缘层，磁化固定层，磁化自由层，第一和第二布线，并且满足以下条件A和B中的至少一个条件A：第一布线包括 在磁化固定层的磁化固定层的厚度方向上延伸的垂直部分和从与磁化固定层侧分离的垂直部分在与磁化固定层的厚度方向交叉的方向上延伸的水平部分 和条件B：第二布线包括在磁化自由层上的磁化自由层的厚度方向上延伸的垂直部分和从远离磁化自由层侧的垂直部分延伸的水平部分 方向与磁化自由层的厚度方向交叉。

公开(公告)号：US08481337B2

公开(公告)日：2013-07-09

申请号：US12690566

申请日：2010-01-20

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

IPC分类号： H01L43/00

CPC分类号： H01L29/66984 ,  H01L29/0657 ,  H01L29/0684

摘要： An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer.

摘要翻译： 本发明的目的是提供一种硅自旋传输装置的制造方法和硅自旋传输装置，从而可获得改进的电压输出特性。 硅自旋传输器件的制造方法包括：通过湿蚀刻图案化硅膜并形成硅沟道层的第一步骤; 以及在硅沟道层上形成彼此分开的无磁化层和磁化固定层的第二步骤。

公开(公告)号：US07697323B2

公开(公告)日：2010-04-13

申请号：US11823063

申请日：2007-06-25

申请人： Katsumichi Tagami ,  Keiji Koga ,  Tohru Oikawa

发明人： Katsumichi Tagami ,  Keiji Koga ,  Tohru Oikawa

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic storage device is provided which has significantly reduced power consumption. The magnetic storage device includes: a yoke which is arranged so as to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged near the line and is capable of writing information using a field occurring from the line. The magnetic storage device is set to satisfy the equation Iw≦a·R+b, where Iw is the write current necessary for the line, R is the magnetoresistance of the yoke, a (mA·H)=7.5E−11, and b (mA)=0.1.

摘要翻译： 提供了一种显着降低功耗的磁存储装置。 磁存储装置包括：轭，被布置成覆盖沿任意方向延伸的线的一部分; 以及布置在线路附近并且能够使用从线路发生的场来写入信息的磁阻元件。 磁存储装置被设定为满足方程式Iw＆nlE; a·R + b，其中Iw是线路所需的写入电流，R是磁轭的磁阻，a（mA·H）= 7.5E-11，以及 b（mA）= 0.1。

公开(公告)号：US20080144227A1

公开(公告)日：2008-06-19

申请号：US12002253

申请日：2007-12-14

申请人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

发明人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

IPC分类号： G11B5/127

CPC分类号： G11C11/16

摘要： A magnetic storage device with a significant reduction in power consumption. The magnetic storage device includes: a yoke which is arranged to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged in contact with the yoke, thereby forming a closed magnetic circuit. The magneto-resistive element is capable of writing information with a field emanating from the yoke. The magnetic storage device satisfies Iw≦a·R, where R is the magnetoresistance of the yoke, Iw is the write current necessary for the line, and a (mA·H)=6E−11.

摘要翻译： 具有显着降低功耗的磁存储装置。 磁存储装置包括：轭，被布置成覆盖沿任意方向延伸的线的一部分; 和与磁轭接触的磁阻元件，从而形成闭合磁路。 磁阻元件能够用从磁轭发出的磁场来写入信息。 磁存储器件满足Iw <= a.R，其中R是磁轭的磁阻，Iw是线所需的写入电流，a（mA.H）= 6E-11。

公开(公告)号：US20080024935A1

公开(公告)日：2008-01-31

申请号：US11823063

申请日：2007-06-25

申请人： Katsumichi Tagami ,  Keiji Koga ,  Tohru Oikawa

发明人： Katsumichi Tagami ,  Keiji Koga ,  Tohru Oikawa

IPC分类号： G11B5/00

CPC分类号： G11C11/16

摘要： A magnetic storage device is provided which has significantly reduced power consumption. The magnetic storage device includes: a yoke which is arranged so as to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged near the line and is capable of writing information using a field occurring from the line. The magnetic storage device is set to satisfy the equation Iw≦a·R+b, where Iw is the write current necessary for the line, R is the magnetoresistance of the yoke, a (mA·H)=7.5E−11, and b (mA)=0.1.

摘要翻译： 提供了一种显着降低功耗的磁存储装置。 磁存储装置包括：轭，被布置成覆盖沿任意方向延伸的线的一部分; 以及布置在线路附近并且能够使用从线路发生的场来写入信息的磁阻元件。 磁存储装置被设置为满足等式Iw <= a.R + b，其中Iw是线路所需的写入电流，R是磁轭的磁阻，a（mA.H）= 7.5E-11， 和b（mA）= 0.1。

公开(公告)号：US07649766B2

公开(公告)日：2010-01-19

申请号：US12002253

申请日：2007-12-14

申请人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

发明人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic storage device with a significant reduction in power consumption. The magnetic storage device includes: a yoke which is arranged to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged in contact with the yoke, thereby forming a closed magnetic circuit. The magneto-resistive element is capable of writing information with a field emanating from the yoke. The magnetic storage device satisfies Iw≦a·R, where R is the magnetoresistance of the yoke, Iw is the write current necessary for the line, and a (mA·H)=6E−11.

摘要翻译： 具有显着降低功耗的磁存储装置。 磁存储装置包括：轭，被布置成覆盖沿任意方向延伸的线的一部分; 和与磁轭接触的磁阻元件，从而形成闭合磁路。 磁阻元件能够用从磁轭发出的磁场来写入信息。 磁存储器件满足Iw <= a.R，其中R是磁轭的磁阻，Iw是线所需的写入电流，a（mA.H）= 6E-11。

公开(公告)号：US09401419B2

公开(公告)日：2016-07-26

申请号：US13445476

申请日：2012-04-12

申请人： Tomoyuki Sasaki ,  Tohru Oikawa

发明人： Tomoyuki Sasaki ,  Tohru Oikawa

IPC分类号： H01L29/88 ,  H01L27/108 ,  H01L29/66 ,  H01L29/82 ,  H01L29/06

CPC分类号： H01L29/66984 ,  H01L29/0657 ,  H01L29/82

摘要： A spin transport device includes a semiconductor layer 3, a first ferromagnetic layer 1 provided on the semiconductor layer 3 via a first tunnel barrier layer 5A, and a second ferromagnetic layer 2 provided on the semiconductor layer 3 via a second tunnel barrier layer 5B to be spaced from the first ferromagnetic layer 1, and the semiconductor layer 3 includes a first region RI broadening in a direction away from the first ferromagnetic layer 1 along a direction orthogonal to a thickness direction from the first ferromagnetic layer 1, and a second region R12 extending in a direction toward the second ferromagnetic layer 2 along the direction orthogonal to the thickness direction from the first ferromagnetic layer 1. The second region R12 has a relatively higher impurity concentration than the first region R1.

摘要翻译： 自旋传输装置包括半导体层3，经由第一隧道势垒层5A设置在半导体层3上的第一铁磁层1和经由第二隧道势垒层5B设置在半导体层3上的第二铁磁层2 与第一铁磁层1间隔开，并且半导体层3包括沿着与第一铁磁层1的厚度方向正交的方向在远离第一铁磁层1的方向上变宽的第一区域RI，以及第二区域R12延伸 沿着与第一铁磁层1的厚度方向正交的方向朝向第二铁磁层2的方向。第二区域R12具有比第一区域R1更高的杂质浓度。