发明授权
- 专利标题: Asymmetric wedge JFET, related method and design structure
- 专利标题(中): 非对称楔形JFET,相关方法和设计结构
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申请号: US12888828申请日: 2010-09-23
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公开(公告)号: US08481380B2公开(公告)日: 2013-07-09
- 发明人: Xuefeng Liu , Richard A. Phelps , Robert M. Rassel , Xiaowei Tian
- 申请人: Xuefeng Liu , Richard A. Phelps , Robert M. Rassel , Xiaowei Tian
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Anthony J. Canale
- 主分类号: H01L21/337
- IPC分类号: H01L21/337
摘要:
A junction gate field-effect transistor (JFET) for an integrated circuit (IC) chip is provided comprising a source region, a drain region, a lower gate, and a channel, with an insulating shallow trench isolation (STI) region extending from an inner edge of an upper surface of the source region to an inner edge of an upper surface of the drain region, without an intentionally doped region, e.g., an upper gate, coplanar with an upper surface of the IC chip between the source/drain regions. In addition, an asymmetrical quasi-buried upper gate can be included, disposed under a portion of the STI region, but not extending under a portion of the STI region proximate to the drain region. Embodiments of this invention also include providing an implantation layer, under the source region, to reduce Ron. A related method and design structure are also disclosed.