Invention Grant
- Patent Title: Two-transistor floating-body dynamic memory cell
- Patent Title (中): 双晶体体浮体动态存储单元
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Application No.: US12681289Application Date: 2008-10-01
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Publication No.: US08498140B2Publication Date: 2013-07-30
- Inventor: Jerry G. Fossum , Leo Mathew , Michael Sadd , Vishal P. Trivedi
- Applicant: Jerry G. Fossum , Leo Mathew , Michael Sadd , Vishal P. Trivedi
- Applicant Address: US FL Gainesville
- Assignee: University of Florida Research Foundation, Inc.
- Current Assignee: University of Florida Research Foundation, Inc.
- Current Assignee Address: US FL Gainesville
- Agency: Saliwanchik, Lloyd & Eisenschenk
- International Application: PCT/US2008/078460 WO 20081001
- International Announcement: WO2009/046114 WO 20090409
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; G11C7/00 ; G11C11/401 ; G11C11/4063 ; G11C11/40
Abstract:
Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better signal margin, longer data retention, and higher memory density.
Public/Granted literature
- US20100329043A1 Two-Transistor Floating-Body Dynamic Memory Cell Public/Granted day:2010-12-30
Information query
