发明授权
US08501623B2 Method of forming a semiconductor device having a metal silicide and alloy layers as electrode
有权
形成具有金属硅化物和合金层作为电极的半导体器件的方法
- 专利标题： Method of forming a semiconductor device having a metal silicide and alloy layers as electrode
- 专利标题（中）： 形成具有金属硅化物和合金层作为电极的半导体器件的方法
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申请号： US12841430申请日： 2010-07-22
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公开(公告)号： US08501623B2公开(公告)日： 2013-08-06
- 发明人: Gyuhwan Oh , Young-Lim Park , Soonoh Park , Dongho Ahn , Jinil Lee
- 申请人： Gyuhwan Oh , Young-Lim Park , Soonoh Park , Dongho Ahn , Jinil Lee
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG Electronics Co., Ltd.
- 当前专利权人： SAMSUNG Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Stanzione & Kim, LLP
- 优先权： KR10-2009-0066990 20090722
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary.
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