Invention Grant
- Patent Title: Photoresist stripping technique
- Patent Title (中): 光阻剥离技术
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Application No.: US12566762Application Date: 2009-09-25
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Publication No.: US08512939B2Publication Date: 2013-08-20
- Inventor: Chien-Wei Wang , Ching-Yu Chang
- Applicant: Chien-Wei Wang , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.
Public/Granted literature
- US20110076624A1 PHOTORESIST STRIPPING TECHNIQUE Public/Granted day:2011-03-31
Information query
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