公开(公告)号：US20110059396A1

公开(公告)日：2011-03-10

申请号：US12555145

申请日：2009-09-08

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包含可光降解的基材; 并暴露第二材料层的至少一部分。

公开(公告)号：US20100285410A1

公开(公告)日：2010-11-11

申请号：US12463501

申请日：2009-05-11

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

公开(公告)号：US09046785B2

公开(公告)日：2015-06-02

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: G03F7/42 ,  G03F7/40 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US08822347B2

公开(公告)日：2014-09-02

申请号：US12430614

申请日：2009-04-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/266 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/0332

Abstract: A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.

Abstract translation: 在半导体衬底上形成湿溶性光刻层的系统包括提供衬底，在衬底上沉积包括第一材料的第一层，以及在衬底上沉积包含第二材料的第二层。 在一个实施例中，第一材料包括与第二材料不同的组成，第一层和第二层之一包括硅。

公开(公告)号：US08658344B2

公开(公告)日：2014-02-25

申请号：US13534961

申请日：2012-06-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。

公开(公告)号：US08512939B2

公开(公告)日：2013-08-20

申请号：US12566762

申请日：2009-09-25

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/425 ,  H01L21/31133

Abstract: A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法可以包括提供基底; 在所述衬底上形成第一材料层; 在所述衬底上形成图案化的第二材料层; 以及用包含空间位阻有机碱和有机溶剂的流体除去图案化的第二材料层。

公开(公告)号：US08304179B2

公开(公告)日：2012-11-06

申请号：US12463501

申请日：2009-05-11

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

公开(公告)号：US20120090547A1

公开(公告)日：2012-04-19

申请号：US13337846

申请日：2011-12-27

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: C23C16/46

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的系统。 该系统包括化学品供应室，可操作以分配蒸气的供应喷嘴和可操作以随着蒸汽分配而原位向基板提供热量的加热元件。 该系统可以进一步包括反应室和/或混合室。

公开(公告)号：US08105954B2

公开(公告)日：2012-01-31

申请号：US12254658

申请日：2008-10-20

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: H01L21/47

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

公开(公告)号：US20110159670A1

公开(公告)日：2011-06-30

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/265 ,  G03F7/004 ,  G03F7/027 ,  H01L21/302

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。